Internal Stress Control for Magnetostrictive Thin Films by Substrate Bias
S. Miyata, R. Toyoda, M. Hashimoto, S. Sakano, T. Iijima, A. Tonegawa, Y. Matsumura
Tokai University, Hiratsuka-shi, Japan
Internal stress control is an important requirement for the magnetostrictive thin film used as thin film actuator. In this study, the ion bombardment parameter Pi was evaluated by substrate bias change during sputter deposition in order to control internal stress of the films. The Pi was determined by plasma diagnostics using Langmuir probe and ion energy analyzer. In the result, the compressive stress and magnetostrictive susceptibility of sputtered thin films were increased with the increasing of Pi. In conclusion, these results can be suggested that the evaluation of Pi could be highly advantage in designing thin film properties for actuator.
ACTUATOR 2016 Manuscript P 55
Publication date: 01/06/2016
Manuscript P 55 published in Conference Proceedings ACTUATOR 2016
El vendedor asume toda la responsabilidad de esta entrada.